Micro and Nano Processing | Introduction to Dry Etching Process

Etching technology is divided into: wet etching and dry etching

Wet etching is divided into: chemical etching and electrolytic etching

Dry etching is divided into: plasma etching, ion beam sputtering etching, reactive ion etching

Dry etching is a technique for etching thin films with the more chemically active nature of plasma.

Depending on the etching mechanism using ions, there are three types of dry etching.Physical etching, chemical etching, and physicochemical etching.Among them, physical etching, also known as sputter etching, is highly directional and can achieve anisotropic etching, but cannot perform selective etching. Chemical etching uses chemically active atomic groups in the plasma to chemically react with the etched material to achieve the etching purpose. Since the core of etching is still a chemical reaction, the effect of etching is somewhat similar to that of wet etching, with better selectivity, but poor anisotropy.

Comparison of plasma dry etching mechanism and etching parameters

Etching parametersPhysical etching - RF field vertical sheetChemical etching - RF field parallel sheetPhysical and chemical etching - RF field vertical sheet
Etching MechanismPhysical ion sputteringReactive element chemistryIon sputtering and reactive element chemistry
Sidewall profileAnisotropyIsotropicAnisotropy
Select more thanLow/difficult Improve (1:1)Very high (500:1)High (5:1~100:1)
Etching rateHighslowModerate
Line width controlGoodVery poorVery good

According to the plasma generation method, ICP inductively coupled plasma, CCP capacitively coupled plasma, ECR microwave electron cyclotron resonance plasma. cyclotron resonance).


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