Micro-nano structure/MEMS foundry platform technology capability

The laboratory platform has a total of more than 200 sets of equipment, etc., of which the main equipment (more than 40 sets) includes.

-Graphical devices

Electron beam exposure, laser direct writing, desktop contact lithography, desktop lithography, etc.

-Film deposition equipment

ICP-PECVD, LPCVD, magnetron sputtering, electron beam evaporation coating, PE-ALD, DLC thin film deposition, etc., electroplating (Au, Ag, Cu, Ni, Sn, etc.)

-Etching equipment

ICP-RIE, RIE, IBE, DRIE deep silicon etching, XeF2 table silicon etching machine, HF vapor phase etching and other dry etching equipment and wet etching equipment to meet the body silicon, dielectric film, metal oxide, metal, etc. and the matching CO2 supercritical release equipment

-Characterization and test equipment

AFM, step meter, Raman spectroscopy, SEM, FIB, confocal microscope, white light interferometer, infrared thermal imager, FEMTO-TOOL micro and nano mechanics tester, ultra-high speed camera, 3D Doppler laser vibrometer, DC/RF probe stage (60GHZ), network analyzer (60GHz), semiconductor analyzer, impedance analyzer and high-precision electrical original meter, etc.

-Device back-end packaging equipment

Wafer thinning, CMP polishing, wafer bonding, placement machine, scribing machine, wire bonding machine, solid state machine, laser welding machine and other processing equipment developed by the team, packaging equipment.

Platform Technology Capabilities

 

-Process integration and platform capabilities

-Conductive DLC film layer (super slip vice, conductive super hard film layer, etc.)

-AIN/PZT thin film process (piezoelectric drive material)

-Large size highly oriented carbon material growth and device processing process

-Bonding: anodic bonding, glass solder bonding, eutectic bonding (AIGe), diffusion bonding process

-Atmosphere or vacuum encapsulation, Reseal

-Grind thinning and atomic level polishing process

-Si-based all-wet micro and nano processing process - Flexible substrate micro and nano device processing

-Manufacturing and Packaging Capabilities

-Silicon through-hole (TSV) Glass through-hole (TGV)

-Pressure/Gas/Infrared/Humidity sensors

-Microfluidic chip processing and related testing

A super-slip RF / inertial device processing capabilities

-Die's full packaging capabilities

Application CategoryEquipment nameEquipment ModelProcess Parameters
PlatingLow Pressure Chemical Vapor Deposition (LPCVD)HORIS L6471-1Can deposit SIN, TEOS, poly and other thin
Film 1-50 pieces/oven
Thermal oxidationThermal oxidation of furnace tubes
AnnealingRapid annealing furnace RTPAnnealsys AS-One 150Maximum temperature up to 1500°C, temperature rise rate
Max. 200℃/s
FIB processingFocused Ion Beam FIBThermo Fisher Scios 2 HiVac 
TEM sample preparation 
SEM morphological observationField Emission Environmental Scanning Electron Microscopy ESEMThermo Fisher Quattro S 
SEM energy spectrum analysis 
Electron Beam Evaporation Coating - MetalElectron beam evaporationFU-20PEB-950Evaporation of metal film, can do lift-off process coating, 8-inch substrate downward compatible
Electron Beam Evaporation Coating - DielectricElectron beam evaporationFU-12PEBVaporized media film can be plated 10 pieces of four-inch substrate in one furnace
Magnetron Sputtering Coating - MetalMagnetron sputtering systemfse-bsls-rd-6inchSputtered metal film, 6" substrate
Atomic layer depositionPlasma Enhanced Atomic Layer Deposition SystemICPALD-S200Currently dominated by Al2O3
DLC coatingDiamond-like thin film chemical deposition systemCNT-DLC-CL200 
Dry EtchingDry etching machineNorth HuachuangSilicon Bosch and ultra-low temperature etching, SiO2 with quartz deep etching, below 8 in
IBE etchingIon Beam Etching System (IBE)AE4Three-dimensional structure material etching, etching steepness better than 85 degrees, etching accuracy 10nm
Plasma debindingMicrowave plasma debinding machineAlpha Plasma 
UV lithographyUV LithographySUSS MA6BA6GEN4Alignment accuracy: ±0.5um, resolution 600nm
ElectroplatingPlating MachineWPS-200MTCu plating, Au plating, Ni/Ni alloy plating
Critical dryingSupercritical point dryerAutomegasamdri-915B 
ZoningCutting machine scribing machineDisco D323 
Wafer BondingWafer Bonding MachineSUSS MicroTec SB6Gen2Anode bonding
AFM TestingHigh-resolution atomic force microscopeOxford Cypher ES 
Atomic force microscopyPark Systems NX20 
Electron beam lithographyElectron beam lithographyElionix ELS-F125G8Not including the cost of glue leveling, etc., material costs are calculated separately according to the type of glue used
Application CategoryEquipment nameEquipment ModelProcess Parameters
PlatingLow Pressure Chemical Vapor Deposition (LPCVD)HORIS L6471-1Can deposit SIN, TEOS, poly and other thin
Film 1-50 pieces/oven
Thermal oxidationThermal oxidation of furnace tubes
AnnealingRapid annealing furnace RTPAnnealsys AS-One 150Maximum temperature up to 1500°C, temperature rise rate
Max. 200℃/s
FIB processingFocused Ion Beam FIBThermo Fisher Scios 2 HiVac 
TEM sample preparation 
SEM morphological observationField Emission Environmental Scanning Electron Microscopy ESEMThermo Fisher Quattro S 
SEM energy spectrum analysis 
Electron Beam Evaporation Coating - MetalElectron beam evaporationFU-20PEB-950Evaporation of metal film, can do lift-off process coating, 8-inch substrate downward compatible
Electron Beam Evaporation Coating - DielectricElectron beam evaporationFU-12PEBVaporized media film can be plated 10 pieces of four-inch substrate in one furnace
Magnetron Sputtering Coating - MetalMagnetron sputtering systemfse-bsls-rd-6inchSputtered metal film, 6" substrate
Atomic layer depositionPlasma Enhanced Atomic Layer Deposition SystemICPALD-S200Currently dominated by Al2O3
DLC coatingDiamond-like thin film chemical deposition systemCNT-DLC-CL200 
Dry EtchingDry etching machineNorth HuachuangSilicon Bosch and ultra-low temperature etching, SiO2 with quartz deep etching, below 8 in
IBE etchingIon Beam Etching System (IBE)AE4Three-dimensional structure material etching, etching steepness better than 85 degrees, etching accuracy 10nm
Plasma debindingMicrowave plasma debinding machineAlpha Plasma 
UV lithographyUV LithographySUSS MA6BA6GEN4Alignment accuracy: ±0.5um, resolution 600nm
ElectroplatingPlating MachineWPS-200MTCu plating, Au plating, Ni/Ni alloy plating
Critical dryingSupercritical point dryerAutomegasamdri-915B 
ZoningCutting machine scribing machineDisco D323 
Wafer BondingWafer Bonding MachineSUSS MicroTec SB6Gen2Anode bonding
AFM TestingHigh-resolution atomic force microscopeOxford Cypher ES 
Atomic force microscopyPark Systems NX20 
Electron beam lithographyElectron beam lithographyElionix ELS-F125G8Not including the cost of glue leveling, etc., material costs are calculated separately according to the type of glue used

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